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High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems

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Product Details
Customization: Available
Application: Power Electronic Components
Batch Number: 2023+
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  • High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
  • High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
  • High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
  • High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
  • High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
  • High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
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Basic Info.

Model NO.
SSP20N60S
Certification
RoHS
Manufacturing Technology
Discrete Device
Material
Power Semiconductor
Model
Ssp20n60s
Package
to-220
Signal Processing
Power Switch Control
Type
N-Type Semiconductor
Polarity
N
Special Function
Fast Recovery Diode
Approval Standards
Automotive
Number of Pins
3pins
Transport Package
Cartons
Specification
1*2cm
Trademark
SUPER
Origin
China
HS Code
8541290000
Production Capacity
10000 Pieces Per Year

Packaging & Delivery

Package Size
30.00cm * 20.00cm * 0.20cm
Package Gross Weight
0.500kg

Product Description

High-Performance Ssp20n60s Power Mosfet for Renewable Energy SystemsDescription:
The SJ-FET represents a groundbreaking advancement in the realm of high-voltage MOSFETs. By employing a cutting-edge charge balance mechanism, it delivers exceptional low on-resistance and a remarkably lower gate charge performance. This state-of-the-art technology is meticulously designed to minimize conduction losses, enhance switching performance, and sustain extreme dv/dt rates and elevated avalanche energy. SJ-FET is ideally suited for diverse AC/DC power conversions in switching mode operations, ensuring heightened efficiency and performance.

Features:
1. Advanced Multi-Epi process SJ-FET
2. Robust 650V @TJ = 150 ºC
3. Typical RDS(on) = 0.16Ω for superior efficiency
4. Exceptionally Low Gate Charge (typ. Qg= 27.5nC)
5. Fully avalanche tested for reliability
6. Built-in Zener diode for enhanced ESD robustness (>2kV HBM)

Benefits:
1. Unmatched performance in its class
2. Facilitates higher power density designs, contributing to BOM savings and lower
assembly costs, enhancing cost-efficiency
3. User-friendly driving and parallel capabilities
4. Improved production yield by mitigating ESD-related failures
5. Fewer production complications and reduced field return rates
6. Simplified selection of optimal parts for precise design tuning
Model no. SSP20N60S
Catagory Mosfet
VDSS 600V
I 20A
VGS 3.5V
Package Type TO-220
Package Tube
Unit gross weight 3.6g
QTY 1000/box
Material Silicon
HS Code 8541290000
Transport Package Tube
Manufacturing Technology Discrete Device
High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems
High-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems



High-Performance Ssp20n60s Power Mosfet for Renewable Energy SystemsHigh-Performance Ssp20n60s Power Mosfet for Renewable Energy SystemsHigh-Performance Ssp20n60s Power Mosfet for Renewable Energy SystemsHigh-Performance Ssp20n60s Power Mosfet for Renewable Energy SystemsHigh-Performance Ssp20n60s Power Mosfet for Renewable Energy Systems

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